F1120 simili

  • F1120
    • 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1120 datasheet e spec

Fabbricante : Polyfet RF 

Viaggi :  

Pins : 4 

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 48 KB

Applicazione : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F1120 PDF Download