F1170 specifiche: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1170 simili

F1170
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1174
- 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1170 datasheet e spec

Fabbricante : Polyfet RF

Viaggi :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 47 KB

Applicazione : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor