F1214 specifiche: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1214 simili

F1210
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1214
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1214 datasheet e spec

Fabbricante : Polyfet RF

Viaggi :

Pins : 6

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 38 KB

Applicazione : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor