Percorso:OKDatasheet > Tutti i fornitori > Polyfet RF Scheda > F1222
F1222 specifiche: 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Percorso:OKDatasheet > Tutti i fornitori > Polyfet RF Scheda > F1222
F1222 specifiche: 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Fabbricante : Polyfet RF
Viaggi :
Pins : 2
Temperatura : Min -65 °C | Max 150 °C
Dimensione : 41 KB
Applicazione : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor