F1430 specifiche: 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1430 simili

F1430
- 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1430 datasheet e spec

Fabbricante : Polyfet RF

Viaggi :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 41 KB

Applicazione : 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor