F2012 specifiche: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2012 simili

F2012
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2013
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2012 datasheet e spec

Fabbricante : Polyfet RF

Viaggi :

Pins : 2

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 40 KB

Applicazione : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor