F2021 specifiche: 7.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2021 simili

F2021
- 7.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2021 datasheet e spec

Fabbricante : Polyfet RF

Viaggi :

Pins : 2

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 40 KB

Applicazione : 7.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor