F2201 specifiche: 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2201 simili

F2201
- 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2202
- 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2201 datasheet e spec

Fabbricante : Polyfet RF

Viaggi :

Pins : 2

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 38 KB

Applicazione : 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor