F3002 specifiche: 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F3002 simili

F3002
- 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F3002 datasheet e spec

Fabbricante : Polyfet RF

Viaggi :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 39 KB

Applicazione : 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor