F5001 specifiche: 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F5001 simili

F5001
- 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F5001 datasheet e spec

Fabbricante : Polyfet RF

Viaggi :

Pins : 2

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 40 KB

Applicazione : 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor