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L125 specifiche: 15 Watt, silicon gate enhancement mode RF power LDMOS transistor
L125 simili
- L125
- 15 Watt, silicon gate enhancement mode RF power LDMOS transistor
L125 datasheet e spec
Fabbricante : Polyfet RF
Viaggi : SO-8
Pins : 8
Temperatura : Min -65 °C | Max 150 °C
Dimensione : 41 KB
Applicazione : 15 Watt, silicon gate enhancement mode RF power LDMOS transistor
L125 PDF Download