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L2801 specifiche: 15 Watt, silicon gate enhancement mode RF power LDMOS transistor
L2801 simili
- L2801
- 15 Watt, silicon gate enhancement mode RF power LDMOS transistor
L2801 datasheet e spec
Fabbricante : Polyfet RF
Viaggi : SO
Pins : 2
Temperatura : Min -65 °C | Max 150 °C
Dimensione : 46 KB
Applicazione : 15 Watt, silicon gate enhancement mode RF power LDMOS transistor
L2801 PDF Download