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L8821P specifiche: 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8821P simili
- L8821P
- 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8821P datasheet e spec
Fabbricante : Polyfet RF
Viaggi : SO-8
Pins : 8
Temperatura : Min -65 °C | Max 150 °C
Dimensione : 43 KB
Applicazione : 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8821P PDF Download