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LC821 specifiche: 8 Watt, silicon gate enhancement mode RF power LDMOS transistor
LC821 simili
- LC821
- 8 Watt, silicon gate enhancement mode RF power LDMOS transistor
LC821 datasheet e spec
Fabbricante : Polyfet RF
Viaggi :
Pins : 6
Temperatura : Min -65 °C | Max 150 °C
Dimensione : 40 KB
Applicazione : 8 Watt, silicon gate enhancement mode RF power LDMOS transistor
LC821 PDF Download