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LP701 specifiche: 35 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP701 simili
- LP701
- 35 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP701 datasheet e spec
Fabbricante : Polyfet RF
Viaggi :
Pins : 2
Temperatura : Min -65 °C | Max 150 °C
Dimensione : 38 KB
Applicazione : 35 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP701 PDF Download