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LP821 specifiche: 10 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP821 simili
- LP821
- 10 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP821 datasheet e spec
Fabbricante : Polyfet RF
Viaggi :
Pins : 2
Temperatura : Min -65 °C | Max 150 °C
Dimensione : 38 KB
Applicazione : 10 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP821 PDF Download