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LQ801 specifiche: 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ801 simili
- LQ801
- 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ801 datasheet e spec
Fabbricante : Polyfet RF
Viaggi :
Pins : 4
Temperatura : Min -65 °C | Max 150 °C
Dimensione : 38 KB
Applicazione : 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ801 PDF Download