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LX703 specifiche: 100 Watt, silicon gate enhancement mode RF power LDMOS transistor
LX703 simili
- LX703
- 100 Watt, silicon gate enhancement mode RF power LDMOS transistor
LX703 datasheet e spec
Fabbricante : Polyfet RF
Viaggi :
Pins : 2
Temperatura : Min -65 °C | Max 150 °C
Dimensione : 40 KB
Applicazione : 100 Watt, silicon gate enhancement mode RF power LDMOS transistor
LX703 PDF Download