P121 specifiche: 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P121 simili

P121
- 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P121 datasheet e spec

Fabbricante : Polyfet RF

Viaggi : SO-8

Pins : 8

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 35 KB

Applicazione : 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor