P123 specifiche: 2 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P123 simili

P123
- 2 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P123 datasheet e spec

Fabbricante : Polyfet RF

Viaggi : SO-8

Pins : 8

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 41 KB

Applicazione : 2 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor