P281 specifiche: 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P281 simili

P281
- 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P281 datasheet e spec

Fabbricante : Polyfet RF

Viaggi : SO-8

Pins : 8

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 41 KB

Applicazione : 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor