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SA741 specifiche: 35 Watt, silicon gate enhancement mode RF power VDMOS transistor
SA741 simili
- SA741
- 35 Watt, silicon gate enhancement mode RF power VDMOS transistor
SA741 datasheet e spec
Fabbricante : Polyfet RF
Viaggi :
Pins : 4
Temperatura : Min -65 °C | Max 150 °C
Dimensione : 39 KB
Applicazione : 35 Watt, silicon gate enhancement mode RF power VDMOS transistor
SA741 PDF Download