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SK202 specifiche: 10 Watt, silicon gate enhancement mode RF power VDMOS transistor
SK202 simili
- SK202
- 10 Watt, silicon gate enhancement mode RF power VDMOS transistor
SK202 datasheet e spec
Fabbricante : Polyfet RF
Viaggi :
Pins : 4
Temperatura : Min -65 °C | Max 150 °C
Dimensione : 38 KB
Applicazione : 10 Watt, silicon gate enhancement mode RF power VDMOS transistor
SK202 PDF Download