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SP741 specifiche: 25 Watt, silicon gate enhancement mode RF power VDMOS transistor
SP741 simili
- SP741
- 25 Watt, silicon gate enhancement mode RF power VDMOS transistor
SP741 datasheet e spec
Fabbricante : Polyfet RF
Viaggi :
Pins : 2
Temperatura : Min -65 °C | Max 150 °C
Dimensione : 38 KB
Applicazione : 25 Watt, silicon gate enhancement mode RF power VDMOS transistor
SP741 PDF Download