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SR746 specifiche: 300 Watt, silicon gate enhancement mode RF power VDMOS transistor
SR746 simili
- SR746
- 300 Watt, silicon gate enhancement mode RF power VDMOS transistor
SR746 datasheet e spec
Fabbricante : Polyfet RF
Viaggi :
Pins : 4
Temperatura : Min -65 °C | Max 150 °C
Dimensione : 40 KB
Applicazione : 300 Watt, silicon gate enhancement mode RF power VDMOS transistor
SR746 PDF Download