2SA1963 specifiche: PNP epitaxial planar silicon transistor, high-frequency low-noise amp, ultrahigh-speed switching application

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2SA1963 datasheet e spec

Fabbricante : SANYO

Viaggi : 2018B

Pins : 3

Temperatura : Min 0 °C | Max 0 °C

Dimensione : 141 KB

Applicazione : PNP epitaxial planar silicon transistor, high-frequency low-noise amp, ultrahigh-speed switching application