2SA1967 specifiche: NPN triple diffused planar silicon transistor, high-voltage amp, high-voltage switching application

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2SA1967 datasheet e spec

Fabbricante : SANYO

Viaggi : 2010C

Pins : 3

Temperatura : Min 0 °C | Max 0 °C

Dimensione : 91 KB

Applicazione : NPN triple diffused planar silicon transistor, high-voltage amp, high-voltage switching application