2SK1961 specifiche: N-channel junction silicon FET, high-frequency low-noise amp application

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2SK1961 datasheet e spec

Fabbricante : SANYO

Viaggi : 2019A

Pins : 3

Temperatura : Min 0 °C | Max 0 °C

Dimensione : 140 KB

Applicazione : N-channel junction silicon FET, high-frequency low-noise amp application