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MJD122-1 specifiche: "NPN darlington transistor for high DC current gain, 100V, 5A"
MJD122-1 simili
- MJD112
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD117
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122-1
- "NPN darlington transistor for high DC current gain, 100V, 5A"
- MJD122T4
- NPN darlington transistor for high DC current gain, 100V, 5A
- MJD127-1
- PNP darlington transistor for high DC current gain, 100V, 5A
- MJD127T4
- PNP darlington transistor for high DC current gain, 100V, 5A
MJD122-1 datasheet e spec
Fabbricante : ST Microelectronics
Viaggi : TO-252
Pins : 3
Temperatura : Min -65 °C | Max 150 °C
Dimensione : 100 KB
Applicazione : "NPN darlington transistor for high DC current gain, 100V, 5A"
MJD122-1 PDF Download