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STH6N100FI specifiche: N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH6N100FI simili
- STH60N10
- Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C
- STH60N10FI
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
- STH6N100
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
- STH6N100FI
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
- STH6NA80FI
- N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS
STH6N100FI datasheet e spec
Fabbricante : ST Microelectronics
Viaggi :
Pins : 0
Temperatura : Min 0 °C | Max 0 °C
Dimensione : 222 KB
Applicazione : N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH6N100FI PDF Download