RC10S02G simili

  • RC10S01
    • Silicon silastic cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 10 A.
  • RC10S01G
    • Silicon GPP cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 10 A.
  • RC10S02
    • Silicon silastic cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 10 A.
  • RC10S02G
    • Silicon GPP cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 10 A.
  • RC10S04
    • Silicon silastic cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 10 A.
  • RC10S04G
    • Silicon GPP cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 10 A.
  • RC10S06
    • Silicon silastic cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 10 A.
  • RC10S06G
    • Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 10 A.

RC10S02G datasheet e spec

Fabbricante : Shanghai Sunrise 

Viaggi :  

Pins : 0 

Temperatura : Min -50 °C | Max 150 °C

Dimensione : 15 KB

Applicazione : Silicon GPP cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 10 A. 

RC10S02G PDF Download