Percorso:OKDatasheet > Tutti i fornitori > Shanghai Sunrise Scheda > RC30S10G
RC30S10G specifiche: Silicon GPP cell rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward current 30 A.
RC30S10G simili
- RC30S01G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 30 A.
- RC30S02
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 30 A.
- RC30S02G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 30 A.
- RC30S04
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 30 A.
- RC30S04G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 30 A.
- RC30S06
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 30 A.
- RC30S06G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 30 A.
- RC30S06G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 30 A.
RC30S10G datasheet e spec
Fabbricante : Shanghai Sunrise
Viaggi :
Pins : 0
Temperatura : Min -50 °C | Max 150 °C
Dimensione : 18 KB
Applicazione : Silicon GPP cell rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward current 30 A.
RC30S10G PDF Download