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Parte n.Applicazione
P4SMAJ12 12 V, 1 mA, surface mount transient voltage suppressor
SB850 50 V, 8 A, schottky barrier rectifier
P6SMBJ7.5 7.5 V, 1 mA, surface mount transient voltage suppressor
5KP24A 24 V, 5 mA, 5000 W, glass passivated junction transient voltage suppressor
2EZ190 190 V, 0.5 A, 2 W, glass passivated junction silicon zener diode
1N4758A 56 V, 5 A, 1 W, glass passivated junction silicon zener diode
SC2092-400-15 400 V, 2 A, silicon controlled rectifier
UF100G 50 V, 1 A, glass passivated junction ultrafast switching rectifier
P6SMBJ16 16 V, 1 mA, surface mount transient voltage suppressor
1SMC5381 130 V, 0.5 A, 5 W, surface mount silicon zener diode
1.5KE56 56 V, 1 mA, glass passivated junction transient voltage suppressor
5KP8.0CA 8.0 V, 5 mA, 5000 W, glass passivated junction transient voltage suppressor
BD246B 90 V, PNP silicon power transistor
1N5363B 30 V, 0.5 A, 5 W, glass passivated junction silicon zener diode
ER3D 200 V, 3 A, surface mount superfast rectifier
P4KE200C 200 V, 1 mA, glass passivated junction transient voltage suppressor
GBU6G 400 V, 6 A, glass passivated single phase bridge rectifier
TE5398 800 V, 1.5 A, glass passivated junction plastic rectifier
TE102RS 200 V, 1 A, glass passivated junction fast switching rectifier
1SMB2EZ11 11 V, 1 A, 2 W, surface mount silicon zener diode
UF2D 200 V, 2 A, surface mount ultrafast switching rectifier
P4KE20A 20 V, 1 mA, glass passivated junction transient voltage suppressor
MMDT3906 40 V, dual PNP small signal surface mount transistor
BDV64A 80 V, PNP silicon power darlington
P4KE220AC 220 V, 1 mA, glass passivated junction transient voltage suppressor
1SMB5955 180 V, 1 A, 1.5 W, surface mount silicon zener diode
P4KE110A 110 V, 1 mA, glass passivated junction transient voltage suppressor
1SMC5355 18 V, 0.5 A, 5 W, surface mount silicon zener diode

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