28C64ASI-4 specifiche: High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.

28C64ASI-4 simili

28C64ASI-3
- High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.
28C64AJM-4
- High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
28C64AJM-3
- High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.
28C64AJM-2
- High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns.
28C64ASM-1
- High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns.
28C64APC-3
- High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.
28C64ATI-2
- High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns.
28C64ASC-1
- High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns.

28C64ASI-4 datasheet e spec

Fabbricante : Turbo IC

Viaggi : SOIC

Pins : 28

Temperatura : Min -40 °C | Max 85 °C

Dimensione : 46 KB

Applicazione : High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.