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2N6519 specifiche: High voltage transistor. Collector-emitter voltage Vceo = -300V. Collector-base voltage Vcbo = -300V. Collector dissipation Pc(max) = 0.625W.

2N6519 simili

  • 2N6515
    • High voltage transistor. Collector-emitter voltage Vceo = 250V. Collector-base voltage Vcbo = 250V. Collector dissipation Pc(max) = 625mW.
  • 2N6516
    • High voltage transistor. Collector-emitter voltage Vceo = 250V. Collector-base voltage Vcbo = 250V. Collector dissipation Pc(max) = 625mW.
  • 2N6517
    • High voltage transistor. Collector-emitter voltage Vceo = 350V. Collector-base voltage Vcbo = 350V. Collector dissipation Pc(max) = 625mW.
  • 2N6518
    • High voltage transistor. Collector-emitter voltage Vceo = -250V. Collector-base voltage Vcbo = -250V. Collector dissipation Pc(max) = 0.625W.
  • 2N6519
    • High voltage transistor. Collector-emitter voltage Vceo = -300V. Collector-base voltage Vcbo = -300V. Collector dissipation Pc(max) = 0.625W.

2N6519 datasheet e spec

Fabbricante : Usha 

Viaggi :  

Pins : 3 

Temperatura : Min 0 °C | Max 150 °C

Dimensione : 54 KB

Applicazione : High voltage transistor. Collector-emitter voltage Vceo = -300V. Collector-base voltage Vcbo = -300V. Collector dissipation Pc(max) = 0.625W. 

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