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MJE2955T specifiche: PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W.

MJE2955T simili

  • MJE2955T
    • PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W.

MJE2955T datasheet e spec

Fabbricante : Usha 

Viaggi : TO-220 

Pins : 3 

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 52 KB

Applicazione : PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W. 

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