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IRF1010E specifiche: HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
IRF1010E simili
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IRF1010E datasheet e spec
Fabbricante : IR
Viaggi :
Pins : 3
Temperatura : Min -55 °C | Max 175 °C
Dimensione : 214 KB
Applicazione : HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
IRF1010E PDF Download