IRF1010ES specifiche: HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.

IRF1010ES simili

IRF1010E
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
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IRF1010ES datasheet e spec

Fabbricante : IR

Viaggi : DDPak

Pins : 3

Temperatura : Min -55 °C | Max 175 °C

Dimensione : 135 KB

Applicazione : HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.