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IRFB4710 specifiche: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.014 Ohm, ID = 75A
IRFB4710 simili
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IRFB4710 datasheet e spec
Fabbricante : IR
Viaggi :
Pins : 3
Temperatura : Min -55 °C | Max 175 °C
Dimensione : 269 KB
Applicazione : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.014 Ohm, ID = 75A
IRFB4710 PDF Download