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IRFBA22N50A specifiche: HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.23 Ohm, ID = 24A
IRFBA22N50A simili
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IRFBA22N50A datasheet e spec
Fabbricante : IR
Viaggi : Super-220
Pins : 3
Temperatura : Min -40 °C | Max 175 °C
Dimensione : 116 KB
Applicazione : HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.23 Ohm, ID = 24A
IRFBA22N50A PDF Download