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IRFBC30L specifiche: HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A
IRFBC30L simili
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IRFBC30L datasheet e spec
Fabbricante : IR
Viaggi : TO-262
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 161 KB
Applicazione : HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A
IRFBC30L PDF Download