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IRFBC40AS specifiche: HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A
IRFBC40AS simili
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IRFBC40AS datasheet e spec
Fabbricante : IR
Viaggi : DDPak
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 122 KB
Applicazione : HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A
IRFBC40AS PDF Download