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IRFBF30 specifiche: HEXFET power MOSFET. VDSS = 900V, RDS(on) = 3.7 Ohm, ID = 3.6A
IRFBF30 simili
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IRFBF30 datasheet e spec
Fabbricante : IR
Viaggi :
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 182 KB
Applicazione : HEXFET power MOSFET. VDSS = 900V, RDS(on) = 3.7 Ohm, ID = 3.6A
IRFBF30 PDF Download