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IRFBG20 specifiche: HEXFET power MOSFET. VDSS = 1000V, RDS(on) = 11Ohm, ID = 1.4A
IRFBG20 simili
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IRFBG20 datasheet e spec
Fabbricante : IR
Viaggi :
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 185 KB
Applicazione : HEXFET power MOSFET. VDSS = 1000V, RDS(on) = 11Ohm, ID = 1.4A
IRFBG20 PDF Download