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IRFD9110 specifiche: HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -0.70 A
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IRFD9110 datasheet e spec
Fabbricante : IR
Viaggi : HD-1
Pins : 4
Temperatura : Min -55 °C | Max 175 °C
Dimensione : 190 KB
Applicazione : HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -0.70 A
IRFD9110 PDF Download