IRFIB5N65A specifiche: HEXFET power MOSFET. VDSS = 650V, RDS(on) = 0.93 Ohm, ID = 5.1 A

IRFIB5N65A simili

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IRFIB5N65A datasheet e spec

Fabbricante : IR

Viaggi : TO-220 FULLPAK

Pins : 3

Temperatura : Min -55 °C | Max 150 °C

Dimensione : 113 KB

Applicazione : HEXFET power MOSFET. VDSS = 650V, RDS(on) = 0.93 Ohm, ID = 5.1 A