IRFIBE30G specifiche: HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 2.1A

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IRFIBE30G datasheet e spec

Fabbricante : IR

Viaggi : TO-220 FULLPAK

Pins : 3

Temperatura : Min -55 °C | Max 150 °C

Dimensione : 156 KB

Applicazione : HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 2.1A