IRG4BC30K-S specifiche: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A

IRG4BC30K-S simili

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IRG4BC30K-S datasheet e spec

Fabbricante : IR

Viaggi : DDPak

Pins : 3

Temperatura : Min -55 °C | Max 150 °C

Dimensione : 177 KB

Applicazione : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A