IRG4BC30U-S specifiche: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A

IRG4BC30U-S simili

IRG4BC10K
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IRG4BC10SD-L
- Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
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- Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
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IRG4BC30U-S datasheet e spec

Fabbricante : IR

Viaggi : DDPak

Pins : 3

Temperatura : Min -55 °C | Max 150 °C

Dimensione : 338 KB

Applicazione : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A