Percorso:OKDatasheet > Tutti i fornitori > IR Scheda > IRG4PC30FD
IRG4PC30FD specifiche: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A
Percorso:OKDatasheet > Tutti i fornitori > IR Scheda > IRG4PC30FD
IRG4PC30FD specifiche: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A
Fabbricante : IR
Viaggi : TO-247AC
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 230 KB
Applicazione : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A